As the patterns of semiconductor integrated circuit structure are formed on chromium coated quartz or soda-lime, the ability to express the fine image of a resist used in exposure apparatus using visible light, ultraviolet, X-ray, etc., In general, is excellent.
Contents | Specification | ||||
---|---|---|---|---|---|
Level | 1 | 2 | 3 | 4 | 5 |
Address Grid Plot Pitch | 0.012㎛ | 0.0125㎛ | 0.025㎛ | 0.05㎛ | 0.1㎛ |
CD (Critical Dimension) | 1.2㎛ | 1.5㎛ | 3.0㎛ | 5.0㎛ | 10.0㎛ |
CD Tolerance | ± 0.10㎛ | ± 0.15㎛ | ± 0.30㎛ | ± 0.50㎛ | ± 1.00㎛ |
Substrate | Only Quartz Base | Quartz or Soda-Lime Base | |||
Material Size | 5 X 5 Inch ~ 2,000 X 2,500 ㎜ | ||||
Thickness | 1.5T / 2.3T / 3.0T / 4.8T / 5.0T / 10T / 13T |
NEPCO starts first to produce the largest size photomask in KOREA.
Size | Thickness [mm] |
Substrate | Special Option |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Sortation | [mm] | [in] | 1.5 | 2.3 | 3.0 | 4.8 | 6.35 | 7.8 | Soda-Lime | Quartz | Tempax | Anti-ESD | Pellicle |
Small Mask | 127.0 x 127.0 | 5 x 5 | ● | ● | ● | ● | ● | ||||||
152.4 x 152.4 | 6 x 6 | ● | ● | ● | ● | ● | |||||||
177.8 x 177.8 | 7 x 7 | ● | ● | ● | ● | ● | |||||||
Large Mask | 203.2 x 203.2 | 8 x 8 | ● | ● | |||||||||
228.6 x 228.6 | 9 x 9 | ● | ● | ● | ● | ||||||||
350 x 350 | - | ● | ● | ● | |||||||||
355.6 x 355.6 | 14 x 14 | ● | ● | ● | ● | ● | |||||||
355.6 x 431.8 | 14 x 17 | ● | ● | ||||||||||
406.4 x 533.4 | 16 x 21 | ● | ● | ||||||||||
508.0 x 609.6 | 20 x 24 | ● | ● | ● | ● | ||||||||
609.6 x 609.6 | 24 x 24 | ● | ● | ● | |||||||||
609.6 x 711.2 | 24 x 28 | ● | ● | ● | ● | ● | |||||||
700.0 x 800.0 | - | ● | ● | ● | ● | ||||||||
812.8 x 1092.2 | 32 x 43 | ● | ● | ● | ● | ||||||||
914.4 x 1498.6 | 36 x 59 | ● | ● | ||||||||||
1,100 x 1,260 | - | ● | ● | ||||||||||
1,220 x 1,400 | - | ● | ● | ||||||||||
2,000 x 2,500 | - | ● | ● |
Please contact us for special size and thickness.
Photomask is made by developing a pattern onto a blank mask, which is a raw material.
On a blank mask, PR (photoresist) applied as a thin film for light exposure.
There are positive and negative PR., and positive type PR is mainly used for photomask. The molecules in PR react and separate during exposure process and then the exposed area of PR is removed during development process.
Source of Light | Wavelength |
---|---|
EUV | 10~100 ㎚ |
ARF | 193 ㎚ |
KRF | 248 ㎚ |
I-LINE | 365 ㎚ |
H-LINE | 405 ㎚ |
G-LINE | 436 ㎚ |
Color | Frequency | Wavelength |
---|---|---|
Violet | 668 ~ 789 THz | 380 ~ 450 ㎚ |
Blue | 631 ~ 668 THz | 450 ~ 475 ㎚ |
Cyan | 606 ~ 630 THz | 476 ~ 495 ㎚ |
Green | 526 ~ 606 THz | 495 ~ 570 ㎚ |
Yellow | 508 ~ 526 THz | 570 ~ 590 ㎚ |
Orange | 484 ~ 508 THz | 590 ~ 620 ㎚ |
Red | 400 ~ 484 THz | 620 ~ 750 ㎚ |
Material | SiO2 | Al2O3 | R2O3 | Na2O | K2O | RO | Heat Properties |
---|---|---|---|---|---|---|---|
Quartz | 100 | 4~5X10-7 / ℃ | |||||
Soda-Lime | 73 | 1 | 15 | 1 | 10 | 81~94X10-7 / ℃ | |
Chrome | 70X10-7 / ℃ |
When using Quartz & Soda lime, it means the distance change of 500mm standard distance, by 1 degree temperature change.
In case of quartz, 0.25um distance change occurred by 1 degree temperature change with 500mm standard distance.
In the case of soda lime, 4.05um by 1 degree temperature change.
NEPCO [15600] 55, 83BEON-GIL, SANDAN-RO, DANWON-GU, ANSAN-SI, GYEONGGI-DO, REPUUBLIC OF KOREA | Tel : +82-31-492-4291 | E-mail : pm@nepco.co.kr
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